Approaching a fully-polarized state of nuclear spins in a semiconductor quantum dot
Peter Millington-Hotze, Harry E. Dyte, Santanu Manna, Saimon F. Covre, da Silva, Armando Rastelli, Evgeny A. Chekhovich

TL;DR
This paper demonstrates a method to achieve over 95% nuclear spin polarization in GaAs quantum dots within a minute, significantly advancing quantum information applications and studies of quantum dynamics.
Contribution
It introduces a combined optical pumping and electron tunneling protocol to efficiently polarize nuclear spins in semiconductor quantum dots.
Findings
Achieved >95% nuclear polarization in GaAs quantum dots.
Polarization process occurs within approximately 1 minute.
Compatible with standard quantum dot device architectures.
Abstract
Magnetic noise of atomic nuclear spins is a major problem for solid state spin qubits. Highly-polarized nuclei would not only overcome this obstacle, but also make nuclear spins a useful quantum information resource. However, achieving sufficiently high nuclear polarizations has remained an evasive goal. Here we implement a nuclear spin polarization protocol which combines strong optical pumping and fast electron tunneling. Polarizations well above 95% are generated in GaAs semiconductor quantum dots on a timescale of 1 minute. The technique is compatible with standard quantum dot device designs, where highly-polarized nuclear spins can simplify implementations of quantum bits and memories, as well as offer a testbed for studies of many-body quantum dynamics and magnetism.
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Taxonomy
TopicsQuantum and electron transport phenomena · Semiconductor Quantum Structures and Devices · Magnetic properties of thin films
