Slave fermion interpretation of the pseudogap in doped Mott insulators

TL;DR

This paper uses a slave fermion approach to analyze the pseudogap in doped Mott insulators, revealing how antiferromagnetic correlations and polaronic effects contribute to spectral features and the pseudogap formation.

Contribution

It introduces a slave fermion framework to explain the pseudogap, highlighting the roles of polaronic and hybridization mechanisms in doped Mott insulators.

Findings

Pseudogap emerges from interplay of polaronic and hybridization effects.

Antiferromagnetic correlations cause a second peak in electron spectra.

Spectral features evolve with doping, merging at higher doping levels.

Abstract

We apply the recently developed slave fermion approach to study the doped Mott insulator in the one-band Hubbard and Hubbard-Heisenberg models. Our results produce several subtle features in the electron spectra and confirm the key role of antiferromagnetic (AFM) correlations in the appearance of the pseudogap. Upon hole doping, the electron spectra exhibit a single peak near the Fermi energy in the local approximation of the Hubbard model where AFM correlations are not included. When AFM correlations are included through an explicit mean-field Heisenberg interaction, a second peak emerges at slightly lower energy and pushes the other peak to higher energy, so that a pseudogap emerges between the two peaks at small doping. Both peaks grow rapidly with increasing doping and eventually merge together, where the pseudogap no longer exists. Detailed analyses of the spectral evolution with doping and the strength of the Heisenberg interaction confirm that the lower-energy peak comes from a polaronic mechanism due to the holon-spinon interaction in the AFM-correlated background and the higher-energy peak arises from the holon hybridization to form the electron quasiparticles. Thus, the pseudogap arises from the interplay of the polaronic and hybridization mechanisms. Our results are in good agreement with previous numerical calculations using the dynamical mean-field theory and its cluster extensions, but give a clearer picture of the underlying physics. Our work provides a promising perspective for clarifying the nature of doped Mott insulators and may serve as a starting point for more elaborate investigations in the future.