Impact of Zr substitution on the electronic structure of ferroelectric hafnia
Jinhai Huang, Ge-Qi Mao, Kan-Hao Xue, Shengxin Yang, Fan Ye, Huajun, Sun, Xiangshui Miao

TL;DR
This study systematically investigates how Zr substitution affects the electronic structure and band gap of hafnia-based ferroelectric materials, revealing mechanisms behind band gap variation and superlattice properties using advanced computational methods.
Contribution
It provides new insights into the electronic structure changes due to Zr substitution in hafnia, including band gap variation rules and superlattice behavior, using self-energy corrected density functional theory.
Findings
The conduction band minimum of HfO2 is at a non-standard k-point.
Band gap variation with Zr content follows identifiable regimes.
Superlattices can have lower band gaps than ZrO2 alone.
Abstract
-based dielectrics are promising for nanoscale ferroelectric applications, and the most favorable material within the family is Zr-substituted hafnia, i.e., (HZO). The extent of Zr substitution can be great, and x is commonly set to 0.5. However, the band gap of is lower than , thus it is uncertain how the Zr content should influence the electronic band structure of HZO. A reduced band gap is detrimental to the cycling endurance as charge injection and dielectric breakdown would become easier. Another issue is regarding the comparison on the band gaps between / superlattices and HZO solid-state solutions. In this work we systematically investigated the electronic structures of , and HZO using self-energy corrected density functional theory. In…
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Taxonomy
TopicsFerroelectric and Negative Capacitance Devices · Semiconductor materials and devices · MXene and MAX Phase Materials
