The out-of-plane magnetoresistance in a Van der Waals thin film of WTe2
Y. S. Liu, H. Xiao, C. Zhang, C. W. Zhang, Y. G. Shi, T. Hu, and C. M., Schneider

TL;DR
This study investigates the magnetoresistance properties of thin film WTe2, revealing large in-plane and saturated out-of-plane magnetoresistance, with insights from quantum oscillations that could impact spintronics device design.
Contribution
It provides new experimental data on out-of-plane magnetoresistance in WTe2 thin films and analyzes quantum oscillations to understand their origin, advancing knowledge in topological semimetal transport.
Findings
Large unsaturated in-plane magnetoresistance at low temperatures
Saturated out-of-plane magnetoresistance with perpendicular magnetic fields
Distinct Shubnikov-de Haas oscillation peaks in in-plane and out-of-plane directions
Abstract
We report the magneto-transport measurements of thin film devices of the topological Weyl semimetal WTe2 with the applied current along and vertical to the in-plane directions. The device is composed of a Van der Waals thin film of WTe2 sandwiched between top and bottom Au electrodes.At low temperatures, we found a large unsaturated in-plane magnetoresistance and a saturated out-of-plane magnetoresistance when the external magnetic fields are applied perpendicular to the plane. By analysis of Shubnikov-de Haas oscillations, one oscillation peak is found in the out-of-plane magnetoresistance, in contrast to four oscillation peaks in the in-plane magnetoresistance.Our work provides new insight into the origin of the unsaturated magnetoresistance in WTe2 and may inspire non-planar engineering to reach higher integration in spintronics.
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Taxonomy
TopicsTopological Materials and Phenomena · Quantum and electron transport phenomena · Graphene research and applications
