Probabilistic-Bits based on Ferroelectric Field-Effect Transistors for Stochastic Computing

TL;DR

This paper introduces ferroelectric FET-based probabilistic bits (p-bits) that generate tunable random bit-streams for stochastic computing, leveraging ferroelectric material stochasticity influenced by thermal noise and electric fields.

Contribution

It is the first to propose ferroelectric FET-based p-bits, demonstrating their tunability, impact of ferroelectric parameters, and application in integer factorization with low hardware cost.

Findings

FE p-bits exhibit tunable stochasticity influenced by ferroelectric domain properties.

The integer factorization circuit using FE p-bits achieves functional verification.

FE p-bits are compatible with CMOS technology and have low hardware costs.

Abstract

A probabilistic-bit (p-bit) is the fundamental building block in the circuit network of a stochastic computing, and it could produce a continuous random bit-stream with tunable probability. Utilizing the stochasticity in few-domain ferroelectric material(FE), we propose for the first time, the p-bits based on ferroelectric FET. The stochasticity of the FE p-bits stems from the thermal noise-induced lattice vibration, which renders dipole fluctuations and is tunable by an external electric field. The impact of several key FE parameters on p-bits' stochasticity is evaluated, where the domain properties are revealed to play crucial roles. Furthermore, the integer factorization based on FE p-bits circuit network is performed to verify its functionality, and the accuracy is found to depend on FE p-bits' stochasticity. The proposed FE p-bits possess the advantages of both extremely low hardware coast and the compatibility with CMOS-technology, rendering it a promising candidate for stochastic computing applications.