Ultra-Low Power Neuromorphic Obstacle Detection Using a Two-Dimensional Materials-Based Subthreshold Transistor
Kartikey Thakar, Bipin Rajendran, Saurabh Lodha

TL;DR
This paper introduces an ultra-low power neuromorphic obstacle detection neuron using 2D material-based transistors, enabling efficient, reconfigurable collision detection with complex neuronal behaviors.
Contribution
It presents a novel 2D subthreshold transistor-based neuron circuit capable of biomimetic spiking and obstacle detection at unprecedented low energy levels.
Findings
Energy efficiency of ~3.5 pJ/spike
Demonstrates complex neuronal behaviors like spike-frequency adaptation
Detects obstacles with energy cost <100 pJ
Abstract
Accurate, timely and selective detection of moving obstacles is crucial for reliable collision avoidance in autonomous robots. The area- and energy-inefficiency of CMOS-based spiking neurons for obstacle detection can be addressed through the reconfigurable, tunable and low-power operation capabilities of emerging two-dimensional (2D) materials-based devices. We present an ultra-low power spiking neuron built using an electrostatically tuned dual-gate transistor with an ultra-thin and generic 2D material channel. The 2D subthreshold transistor (2D-ST) is carefully designed to operate under low-current subthreshold regime. Carrier transport has been modelled via over-the-barrier thermionic and Fowler-Nordheim contact barrier tunnelling currents over a wide range of gate and drain biases. Simulation of a neuron circuit designed using the 2D-ST with 45 nm CMOS technology components shows…
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Taxonomy
TopicsAdvanced Memory and Neural Computing · Neuroscience and Neural Engineering · Analytical Chemistry and Sensors
