Electronic Transport in a Topological Semimetal WTe2 Single Crystal
A. N. Perevalova (1), S. V. Naumov (1), V. V. Chistyakov (1), E. B., Marchenkova (1), B. M. Fominykh (1, 2), V. V. Marchenkov (1, 2) ((1), Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences,, Ekaterinburg, Russia, (2) Ural Federal University
TL;DR
This study investigates the electrical transport properties of WTe2 single crystals, revealing temperature-dependent resistivity behaviors and electron-hole compensation, contributing to understanding topological semimetals.
Contribution
It provides experimental data and analysis of electrical transport in WTe2, highlighting temperature effects and charge carrier compensation in topological semimetals.
Findings
Quadratic temperature dependence of resistivity at low temperatures.
Electron-hole compensation with a slight electron dominance.
Analysis using single-band and two-band models.
Abstract
Electrical resistivity, magnetoresistivity, and the Hall effect have been studied in a topological semimetal WTe2 single crystal in the temperature range from 12 to 200 K under magnetic fields up to 9 T. It has been found that quadratic temperature dependences of the electrical resistivity in the absence of a magnetic field and the conductivity in a magnetic field are observed at low temperatures, which is apparently associated with contributions from various scattering mechanisms. Single-band and two-band models were used to analyze data on the Hall effect and magnetoresistivity. These results indicate electron-hole compensation with a slight predominance of electron charge carriers.
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