Evolution of interface magnetism in Fe/Alq3 bilayer
Avinash Ganesh Khanderao, Sonia Kaushik, Arun Singh Dev, V.R. Reddy,, Ilya Sergueev, Hans-Christian Wille, Pallavi Pandit, Stephan V Roth and, Dileep Kumar

TL;DR
This study investigates the evolution of magnetism at the Fe/Alq3 interface using advanced depth-selective techniques, revealing deep Fe penetration, magnetic relaxation, and cluster formation that influence interfacial magnetic properties.
Contribution
It introduces a novel depth-selective GI-NRS technique to analyze interfacial magnetism in Fe/Alq3 bilayers, providing new insights into magnetic behavior at metal-organic interfaces.
Findings
Deep Fe penetration into Alq3 observed
Formation of a 2.4 nm magnetic dead layer
Fe clustering influences magnetic relaxation
Abstract
Interface magnetism and topological structure of Fe on organic semiconductor film (Alq3) have been studied and compared with Fe film deposited directly on Si (100) substrate. To get information on the diffused Fe layer at the Fe/Alq3 interface, grazing incident nuclear resonance scattering (GINRS) measurements are made depth selective by introducing a 95% enriched thin 57Fe layer at the Interface and producing x-ray standing wave within the layered structure. Compared with Fe growth on Si substrate, where film exhibits a hyperfine field value of 32 T (Bulk Fe), a thick Fe- Alq3 interface has been found with reduced electron density and hyperfine fields providing evidence of deep penetration of Fe atoms into Alq3 film. Due to the soft nature of Alq3, Fe moments relax in the film plane. At the same time, Fe on Si has a resultant ~43 deg out-of-plane orientation of Fe moments at the…
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