A time-orbiting potential chip trap for cold atoms
C. A. Sackett, J. A. Stickney

TL;DR
This paper introduces a novel atom chip trap design utilizing the time-orbiting potential technique, offering improved symmetry, flexibility in positioning, and the ability to transition between three-dimensional and two-dimensional trapping configurations.
Contribution
The paper presents a new chip trap design using time-orbiting potential technique with a simple crossed-wire pattern and rotating bias field, enhancing trap symmetry and versatility.
Findings
Trap is close to spherically symmetric
Can be positioned arbitrarily from the chip
Supports transformation from 3D to 2D trapping
Abstract
We present a design for an atom chip trap that uses the time-orbiting potential technique. The design offers several advantages compared to other chip-trap methods. It uses a simple crossed-wire pattern on the chip, along with a rotating bias field. The trap is naturally close to spherically symmetric, and it can be modified to be exactly symmetric in quadratic order of the coordinates. Loading from a magneto-optical trap is facilitated because the trap can be positioned an arbitrary distance from the chip. The fields can be modified to provide a gradient for support against gravity, and the three-dimensional trap can be adiabatically transformed into a two-dimensional guide.
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Taxonomy
TopicsCold Atom Physics and Bose-Einstein Condensates · Advanced Frequency and Time Standards
