Fundamental cause for superior optoelectronic properties in halide perovskites
Xiaoming Wen, Baohua Jia

TL;DR
This paper proposes that electron upconversion driven by ionic energy reservoirs is the fundamental reason for the superior optoelectronic properties of halide perovskites, explaining their high efficiency and defect tolerance.
Contribution
It introduces a new hypothesis linking ionic energy reservoirs and ion-electron coupling to the enhanced optoelectronic performance of halide perovskites, supported by a comprehensive physical model.
Findings
Electron detrapping enhances fluorescence efficiency.
Prolonged carrier lifetime and increased diffusion length.
Correlation between ionic and electronic dynamics established.
Abstract
Halide perovskites have emerged as revolutionary materials for high performance photovoltaics and optoelectronics due to their superior optoelectronic properties. The physical origin for the superior optoelectronic properties of halide perovskites so far is still poorly understood. Here we propose and demonstrate a hypothesis that electron upconversion (detrapping) driven by ionic energy reservoir is the fundamental cause for the superior optoelectronic properties of halide perovskites. We fully consider ionic influence on the electronic dynamics in mixed ionic-electronic conduction system by introducing new concepts of ionic energy reservoir, ion-electron coupling and ion-phonon scattering. We clarified that the ionic beneficial effect originates from the different mechanisms from that of the detrimental effect of mobile ion. Our hypothesis consistently interprets that the electron…
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Taxonomy
TopicsPerovskite Materials and Applications · Luminescence Properties of Advanced Materials
