Selective surface modification and layer thinning of MoS2 via ultraviolet light irradiation in ionic solution

TL;DR

This paper presents a UV light-based method to selectively modify the surface and thin MoS2 layers, enabling precise control over doping and thickness for advanced 2D device applications.

Contribution

It introduces a novel UV irradiation technique in ionic solutions for simultaneous surface modification and layer thinning of MoS2, with edge-initiated mechanisms.

Findings

Uniform silver nanostructure deposition on MoS2 edges

Controllable thinning of MoS2 to monolayer

Induction of p-type doping through UV irradiation

Abstract

The electrical and optoelectronic properties of transition-metal dichalcogenides (TMDs), such as MoS2, are highly dependent on carrier doping and layer thickness. The ability to selectively control these two critical characteristics is of great importance to develop TMD-based multifunctional device applications, which remains challenging. Here, we report a strategy for controllable surface modification and layer thinning of MoS2 via ultraviolet (UV) light irradiation in a silver ionic solution environment. The results show that by adjusting UV irradiation time, nanostructured silver ultrathin films (~2.9 nm) are uniformly deposited on monolayer MoS2 and can lead to controllable p-type doping effect, while the thickness of MoS2 from few-layer to bulk crystals could be thinned down to the atomic monolayer limit. Both silver nanostructure deposition and layer thinning process have been evidenced to initiate from the edges of MoS2, and independent of the edge type, thus revealing a unique UV light-assisted defect-induced surface modification and layer thinning mechanism. Overall, this study provides a new methodology for selective control of doping and layer thickness in TMDs, paving the way for developing novel 2D nanoelectronics and integrated optoelectronics.