Understanding the Frequency Dependence of Capacitance Measurements of Irradiated Silicon Detectors

TL;DR

This paper investigates how capacitance measurements of irradiated silicon detectors vary with frequency, explaining the phenomenon and proposing a new method to accurately determine sensor parameters despite irradiation effects.

Contribution

It provides a novel explanation for the frequency dependence in capacitance measurements of irradiated silicon detectors and introduces a new extraction method for sensor parameters.

Findings

Frequency dependence explained for irradiated sensors

New method enables accurate parameter extraction

Improved understanding of irradiated silicon detector behavior

Abstract

Capacitance-voltage (CV) measurements are a widely used technique in silicon detector physics. It gives direct information about the full depletion voltage and the effective doping concentration. However, for highly irradiated sensors, the measured data differs significantly from the usual shape which makes the extraction of the afore mentioned parameters less precise to not possible. We present an explanation for the obseved frequency dependence and based on that, a method to extract the desired sensor parameters.