Observation of Kondo condensation in a degenerately doped silicon metal
H. Im, D. U. Lee, Y. Jo, J. Kim, Y. Chong, W. Song, H. Kim, E. K. Kim,, S.-J. Sin, S. Moon, J. R. Prance, Yu. A. Pashkin, and J. S. Tsai

TL;DR
This study observes Kondo condensation in a highly doped silicon metal, revealing a correlated ground state formed by overlapping Kondo clouds, with implications for understanding complex Kondo systems.
Contribution
It provides experimental evidence of Kondo condensation in a disordered silicon metal and analyzes its transition to a disordered Fermi liquid phase using spectroscopy and holographic theory.
Findings
Detection of Kondo effect below 2 K in resistivity
Observation of a pseudogap in the density of states at sub-100 mK
Transition to a metallic Altshuler-Aronov gap under magnetic field
Abstract
When a magnetic moment is embedded in a metal, it captures itinerant electrons to form the Kondo cloud1,2, which can spread out over a few micrometres3,4. For a metal with dense magnetic impurities such that Kondo clouds overlap with each other, correlated ground states are formed. When the impurities form a regular lattice, the result is a heavy fermion or anti-ferromagnetic order depending on the dominant interaction5,6. Even in the case of random impurities, overlapping Kondo clouds are expected to form a coherent ground state. Here, we examine this issue by performing electrical transport and high-precision tunnelling density-of-states (DOS) spectroscopy measurements in a highly P-doped crystalline silicon metal where disorder-induced localized magnetic moments exist7. We detect the Kondo effect in the resistivity of the Si metal below 2 K and an exotic pseudogap in the DOS with gap…
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Taxonomy
TopicsRare-earth and actinide compounds · Quantum and electron transport phenomena · Surface and Thin Film Phenomena
