An efficient and low-cost method to create high-density nitrogen-vacancy centers in CVD diamond for sensing applications

TL;DR

This paper presents a low-cost, efficient method using Ar+ plasma to produce high-density NV- centers in CVD diamond, significantly enhancing quantum sensing capabilities for magnetic field detection.

Contribution

It introduces a novel plasma-based technique to create high-density NV- centers in diamond with high efficiency and low cost, suitable for advanced sensing applications.

Findings

NV- density of ~0.57 ppm achieved

Spin coherence time (T2) of 4 microseconds

Magnetic field sensitivity of ~0.12 pT/Hz^1/2

Abstract

The negatively charged Nitrogen-Vacancy (NV-) center in diamond is one of the most versatile and robust quantum sensors suitable for quantum technologies, including magnetic field and temperature sensors. For precision sensing applications, densely packed NV- centers within a small volume are preferable due to benefiting from 1/N^1/2 sensitivity enhancement (N is the number of sensing NV centers) and efficient excitation of NV centers. However, methods for quickly and efficiently forming high concentrations of NV- centers are in development stage. We report an efficient, low-cost method for creating high-density NV- centers production from a relatively low nitrogen concentration based on high-energy photons from Ar+ plasma. This study was done on type-IIa, single crystal, CVD-grown diamond substrates with an as-grown nitrogen concentration of 1 ppm. We estimate an NV- density of ~ 0.57 ppm (57%) distributed homogeneously over 200 um deep from the diamond surface facing the plasma source based on optically detected magnetic resonance and fluorescence confocal microscopy measurements. The created NV-s have a spin-lattice relaxation time (T1) of 5 ms and a spin-spin coherence time (T2) of 4 us. We measure a DC magnetic field sensitivity of ~ 104 nT Hz^-1/2, an AC magnetic field sensitivity of ~ 0.12 pT Hz^-1/2, and demonstrate real-time magnetic field sensing at a rate over 10 mT s-1 using an active sample volume of 0.2 um3.