Unusual anisotropic magnetoresistance due to magnetization-dependent spin-orbit interactions

TL;DR

This paper investigates the unusual anisotropic magnetoresistance (UAMR) caused by magnetization-dependent spin-orbit interactions in ferromagnetic materials, revealing a new mechanism that influences resistance based on magnetization orientation.

Contribution

It introduces a theoretical model linking magnetization-dependent spin-orbit interactions to UAMR, supported by first-principles calculations and experimental validation.

Findings

UAMR arises from magnetization-dependent spin-orbit interactions.

Strong biaxial strain enhances UAMR effects.

The study offers pathways to optimize materials for spintronic applications.

Abstract

One of recent surprising discoveries is the unusual anisotropic magnetoresistance (UAMR) that depends on two magnetization components perpendicular to the current differently, in contrast to the conventional anisotropic magnetoresistance (AMR) that predicts no change in resistance when the magnetization varies in the plane perpendicular to the current. Using density functional theory and Boltzmann transport equation calculations for bcc Fe, hcp Co, and bcc FeCo alloys, we show that UAMR can be accounted by the magnetization-dependent spin-orbit interactions (SOI): Magnetization-dependent SOI modifies electron energy bands that, in turn, changes resistance. A phenomenological model reveals the intrinsic connection between SOI and order-parameters. Such a mechanism is confirmed by the strong biaxial stain effect on UAMR. Our findings provide an efficient way of searching and optimizing materials with large UAMR, important in the design of high-performance spintronic devices.