Record-high Mobility and Extreme Magnetoresistance on Kagome-lattice in Compensated Semimetal Ni3In2S2

TL;DR

This study reports record-high carrier mobility and extreme magnetoresistance in Ni3In2S2, a kagome-lattice semimetal, highlighting its potential for electronic and spintronic applications through band structure tuning.

Contribution

It provides detailed experimental and theoretical analysis of Ni3In2S2's electronic structure, revealing its exceptional transport properties and how crystal field and doping can optimize kagome-lattice materials.

Findings

Record-high carrier mobility (~8683 cm2 V-1 S-1 for holes)

Extreme magnetoresistance (15518% at 2 K and 13 T)

Band structure explains properties with small electron/hole pockets

Abstract

The kagome-lattice crystal hosts various intriguing properties including the frustrated magnetism, charge order, topological state, superconductivity and correlated phenomena. To achieve high-performance kagome-lattice compounds for electronic and spintronic applications, careful tuning of the band structure would be desired. Here, the electronic structures of kagome-lattice crystal Ni3In2S2 were investigated by transport measurements, angle-resolved photoemission spectroscopy as well as ab initio calculations. The transport measurements reveal Ni3In2S2 as a compensated semimetal with record-high carrier mobility (~8683 cm2 V-1 S-1 and 7356 cm2 V-1 S-1 for holes and electrons) and extreme magnetoresistance (15518% at 2 K and 13 T) among kagome-lattice materials. These extraordinary properties are well explained by its band structure with indirect gap, small electron/hole pockets and large bandwidth of the 3d electrons of Ni on the kagome lattice. This work demonstrates that the crystal field and doping serve as the key tuning knobs to optimize the transport properties in kagome-lattice crystals. Our work provides material basis and optimization routes for kagome-lattice semimetals as electronics and spintronics applications.