Bi layer properties in the Bi-FeNi GMR-type structures probed by spectroscopic ellipsometry
Natalia Kovaleva, Dagmar Chvostova, Ladislav Fekete, and Alexandr, Dejneka

TL;DR
This study investigates the dielectric properties of ultrathin Bi/FeNi multilayer structures using spectroscopic ellipsometry, revealing surface metallic conductivity induced by spin-orbit coupling, indicative of nontrivial 2D topological properties.
Contribution
First detailed spectroscopic ellipsometry analysis of Bi/FeNi multilayers showing SOC-induced surface metallicity and 2D topological features.
Findings
Bi layers exhibit surface metallic conductivity due to SOC effects
Conductivity increases as Bi layer thickness decreases
Evidence of nontrivial 2D topological properties in ultrathin Bi films
Abstract
Bismuth (Bi) having a large atomic number is characterized by the strong spin-orbit coupling (SOC) and is a parent compound of many 3D topological insulators (TIs). The ultrathin Bi films are supposed to be 2D TIs possessing the nontrivial topology, which opens the possibility of developing new efficient technologies in the field of spintronics. Here we aimed at studying the dielectric function properties of ultrathin Bi/FeNi periodic structures using spectroscopic ellipsometry. The [Bi(d)-FeNi(1.8 nm)]N GMR-type structures were grown by rf sputtering deposition on Sitall-glass (TiO2) substrates. The ellipsometric angles Psi(omega) and Delta(omega) were measured for the grown series (d=0.6,1.4,2.0,2.5 nm, N=16) of the multilayered film samples at room temperature for four angles of incidence of 60, 65, 70, and 75 degrees in a wide photon energy range of 0.5-6.5 eV. The measured…
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