Influence of illumination on the quantum lifetime in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers

TL;DR

This study investigates how low-temperature illumination affects electron properties in GaAs quantum wells, revealing increases in electron concentration, mobility, and quantum lifetime due to reduced remote ionized donor effects.

Contribution

It demonstrates that illumination enhances electron quantum lifetime in doped GaAs quantum wells by decreasing remote ionized donor concentration, a novel insight into optoelectronic behavior.

Findings

Illumination increases electron concentration and mobility.

Quantum lifetime of electrons is extended by illumination.

Remote ionized donor effects are reduced under illumination.

Abstract

The influence of illumination on a high mobility two-dimensional electron gas with high concentration of charge carriers is studied in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers at a temperature T = 4.2 K in magnetic fields B < 2 T. It is shown that illumination at low temperatures in the studied heterostructures leads to an increase in the concentration, mobility, and quantum lifetime of electrons. An increase in the quantum lifetime due to illumination of single GaAs quantum wells with modulated superlattice doping is explained by a decrease in the effective concentration of remote ionized donors.