A unipolar quantum dot diode structure for advanced quantum light sources
T. Strobel, J. H. Weber, M. Schmidt, L. Wagner, L. Engel, M. Jetter,, A. D. Wieck, S. L. Portalupi, A. Ludwig, P. Michler

TL;DR
This paper presents a novel n+-i-n++ diode structure embedding quantum dots that enables spectral tuning, deterministic charge control, and high-quality single-photon emission with minimal spectral diffusion, advancing quantum light source technology.
Contribution
The study introduces a new unipolar diode design for quantum dots that achieves spectral tuning and stable, indistinguishable single-photon emission with high two-photon interference visibility.
Findings
Achieved blinking-free, high-indistinguishability single-photon emission.
Observed no spectral diffusion or decoherence above 9 ns timescales.
Photon linewidth deviates from Fourier limit by only 1.68.
Abstract
Triggered, indistinguishable, single photons play a central role in various quantum photonic implementations. Here, we realize a novel nin diode structure embedding semiconductor quantum dots: the gated device enables spectral tuning of the transitions and deterministic control of the observed charged states. Blinking-free single-photon emission and high two-photon indistinguishability is observed. The linewidth's temporal evolution is investigated for timescales spanning more than orders of magnitude, combining photon-correlation Fourier spectroscopy, high-resolution photoluminescence spectroscopy, and two-photon interference (visibility of and ). No spectral diffusion or decoherence on timescales above is observed for most of the dots, and the…
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Quantum Information and Cryptography · Semiconductor Lasers and Optical Devices
