Numerical study of Valence Band states evolution in AlGaAs [111] QDs systems

TL;DR

This paper numerically investigates how the geometry and composition of AlGaAs [111] quantum dots influence their valence band states and optical properties, providing insights for optimizing quantum dot systems.

Contribution

It introduces a numerical simulation approach using the Luttinger Kohn model for AlGaAs and InGaAs nanostructures, focusing on [111] quantum dots and molecules.

Findings

Dependence of ground state optical properties on structural parameters

Predicted optimal parameters for dynamic control of polarization

Source code for Luttinger Kohn model provided

Abstract

Quantum Dots are very attractive nanostructures from an application point of view due to their unique optical properties. Optical properties and Valence Band states character was numerically investigated from the effect of nanostructure geometry and composition. Numerical simulation was carried out using Luttinger Kohn model adapted to the particular use case of QDs in inverted pyramids. We present the source code of the 4 band Luttinger Kohn model that can be used to model AlGaAs or InGaAs nanostructures. Here we focus on the optical properties study of GaAs/AlGaAs [111] QDs and Quantum Dot Molecules (QDMs). We examine the dependence of Ground State (GS) optical properties on their structural parameters and predict optimal parameters of the QD and QDM systems to achieve the dynamic control of GS polarization by the applied electric field.