Charge transfer mediated giant photo-amplification in air-stable $\alpha$-CsPbI$_3$ nanocrystals decorated 2D-WS$_2$ photo-FET with asymmetric contacts

TL;DR

This paper reports a novel air-stable CsPbI3/WS2 heterostructure photo-FET with asymmetric contacts, achieving high responsivity and low dark current, and demonstrating environmental stability and broadband photodetection capabilities.

Contribution

Introduction of a new air-stable CsPbI3/WS2 heterostructure photo-FET with asymmetric contacts, achieving high responsivity and stability under high humidity.

Findings

Dark current ~10^-12 A at zero bias

Responsivity ~10^4 A/W and sensitivity ~10^6

Stable operation under 50-65% humidity

Abstract

Hybrid heterostructure based phototransistors are attractive owing to their high gain induced by photogating effect. However, the absence of an in-plane built-in electric field in the single channel layer transistor results in a relatively higher dark current and require a large operating gate voltage of the device. Here, we report novel air-stable cesium lead iodide/tungsten di-sulfide (CsPbI$_3$/WS$_2$) mixed dimensional heterostructure based photo-field-effect-transistors (photo-FETs) with asymmetric metal electrodes (Cr/WS$_2$/Au), exhibiting extremely low dark current (~10-12 A) with a responsivity of ~102 A/W at zero gate bias. The Schottky barrier (WS$_2$/Au interface) induced rectification characteristics in the channel accompanied by the excellent photogating effect from solution-processed $\alpha$-phase CsPbI$_3$ NCs sensitizers, resulting in gate-tunable broadband photodetection with a very high responsivity (~104 A/W) and excellent sensitivity (~106). Most interestingly, the device shows superior performance even under high humidity (50-65%) conditions owing to the formation of cubic $\alpha$-phase CsPbI$_3$ nanocrystals with a relatively smaller lattice constant (a = 6.2315 {\AA}) and filling of surface vacancies (Pb2+ centres) with the sulfur atoms from WS$_2$ layer, thus protecting it from environmental degradation. These results emphasise a novel strategy for developing mixed dimensional hybrid heterostructure based phototransistors for futuristic integrated nano-optoelectronic systems.