On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation

TL;DR

This paper presents a unified numerical model to determine melting thresholds of various semiconductors under nanosecond laser pulses, incorporating material properties and irradiation conditions for accurate predictions.

Contribution

It introduces a generalized approach to evaluate melting thresholds of semiconductors based on their properties and laser parameters, advancing understanding of laser-material interactions.

Findings

Validated model against experimental data

Provided melting threshold estimates for multiple semiconductors

Established correlations between material properties and melting behavior

Abstract

In this work, a unified numerical model is used to determine the melting thresholds and to investigate early stages of melting of several crystalline semiconductors (Si, Ge, GaAs, CdTe and InP) irradiated by nanosecond laser pulses. A molten fraction approach is used for continuous transition over the melting point. The results are compared with previously published theoretical and experimental data. A survey on the thermophysical and optical properties of the selected materials has been carried out to gather the most relevant data on temperature dependent properties for the solid and liquid states of these semiconductors where such data are available. A generalization of the obtained results is established which enables evaluation of the melting thresholds for different semiconductors based on their properties and irradiation conditions (laser wavelength, pulse duration).