A mempolar transistor made from tellurium

TL;DR

This paper introduces a novel mempolar transistor using tellurium and MoS2 that can reversibly switch polarity, enabling reconfigurable logic, secure circuits, and efficient neural network training with fewer components.

Contribution

The work presents the first tellurium-based mempolar transistor with reversible polarity, and demonstrates its application in reconfigurable circuits, a ternary memory, and neural network regularization.

Findings

Reversible polarity switching between n-type and p-type states.

Implementation of a ternary content-addressable memory with only two transistors.

Development of 'FlipWeight', a device-inspired neural network regularization method.

Abstract

The classic three-terminal electronic transistors and the emerging two-terminal ion-based memristors are complementary to each other in various nonconventional information processing systems in a heterogeneous integration approach, such as hybrid CMOS/memristive neuromorphic crossbar arrays. Recent attempts to introduce transitive functions into memristors have given rise to gate-tunable memristive functions, hetero-plasticity and mixed-plasticity functions. However, it remains elusive under what application scenarios and in what ways transistors can benefit from the incorporation of ion-based memristive effects. Here, we introduce a new type of transistor named 'mempolar transistor' to the transistor family. Its polarity can be converted reversibly, in a nonvolatile fashion, between n-type and p-type depending on the history of the applied electrical stimulus. This is achieved by the use of the emerging semiconducting tellurium as the electrochemically active source/drain contact material, in combination with monolayer two-dimensional MoS2 channel, which results in a gated lateral Te/MoS2/Te memristor, or from a different perspective, a transistor whose channel can be converted reversibly between n-type MoS2 and p-type Te. With this unique mempolar function, our transistor holds the promise for reconfigurable logic circuits and secure circuits. In addition, we propose and demonstrate experimentally, a ternary content-addressable memory made of only two mempolar transistors, which used to require a dozen normal transistors, and by simulations, a device-inspired and hardware matched regularization method 'FlipWeight' for training artificial neural networks, which can achieve comparable performance to that achieved by the prevalent 'Dropout' and 'DropConnect' methods. This work represents a major advance in diversifying the functionality of transistors.