Edge-based 2D alpha-In2Se3-MoS2 ferroelectric field effect device

TL;DR

This paper demonstrates a novel 2D ferroelectric device using alpha-In2Se3 and MoS2, enabling multilevel non-volatile states, high photoresponse, and excitonic modulation for advanced nanoscale electronic and optoelectronic applications.

Contribution

It introduces an edge-based actuation mechanism for ferroelectric switching in alpha-In2Se3-MoS2 heterostructures, enabling sub-nanometric device miniaturization and multimodal functionalities.

Findings

Achieved high photoresponse of 1275 AW-1 in visible range.

Enabled non-volatile switching between different junction configurations.

Demonstrated modulation of excitonic emission channels.

Abstract

Heterostructures based on two dimensional (2D) materials offer the possibility to achieve synergistic functionalities which otherwise remain secluded by their individual counterparts. Herein ferroelectric polarization switching in alpha-In2Se3 has been utilized to engineer multilevel non-volatile conduction states in partially overlapping alpha-In2Se3-MoS2 based ferroelectric semiconducting field effect device. In particular, we demonstrate how the intercoupled ferroelectric nature of alpha-In2Se3 allows to non-volatilely switch between n-i and n-i-n type junction configurations based on a novel edge state actuation mechanism, paving the way for sub-nanometric scale non-volatile device miniaturization. Furthermore the induced asymmetric polarization enables enhanced photogenerated carriers separation resulting in extremely high photoresponse of 1275 AW-1 in the visible range and strong non-volatile modulation of the bright A- and B- excitonic emission channels in the overlaying MoS2 monolayer. Our results show significant potential to harness the switchable polarization in partially overlapping alpha-In2Se3-MoS2 based FeFETs to engineer multimodal non-volatile nanoscale electronic and optoelectronic devices.