The Origin of Two-dimensional Electron Gas in Zn$_{1-x}$Mg$_x$O/ZnO Heterostructures

TL;DR

This study uses first-principles calculations to identify that oxygen vacancies and surface adsorptions, rather than polarity discontinuity, are key to the formation of 2DEG in Zn$_{1-x}$Mg$_x$O/ZnO heterostructures.

Contribution

It reveals the specific mechanisms behind 2DEG formation, highlighting defect states and surface adsorptions as crucial factors, which were previously not fully understood.

Findings

Oxygen vacancies induce defect bands overlapping with conduction band in thick layers.

Surface adsorptions of H, O, or OH are critical in thin-layer heterostructures.

Polarity discontinuity does not cause 2DEG formation in these heterostructures.

Abstract

Although the two-dimensional electron gas (2DEG) in (001) Zn$_{1-x}$Mg$_x$O/ZnO heterostructures has been discovered for about twenty years, the origin of the 2DEG is still inconclusive. In the present letter, the formation mechanisms of 2DEG near the interfaces of (001) Zn$_{1-x}$Mg$_x$O/ZnO heterostructures were investigated via the first-principles calculations method. It is found that the polarity discontinuity near the interface can neither lead to the formation of 2DEG in devices with thick Zn$_{1-x}$Mg$_{x}$O layers nor in devices with thin Zn$_{1-x}$Mg$_{x}$O layers. For the heterostructure with thick Zn$_{1-x}$Mg$_{x}$O layers, the oxygen vacancies near the interface introduce a defect band in the band gap, and the top of the defect band overlaps with the bottom of the conduction band, leading to the formation of the 2DEG near the interface of the device. For the heterostructure with thin Zn$_{1-x}$Mg$_{x}$O layers, the absorption of hydrogen atoms, oxygen atoms, or OH groups on the surface of Zn$_{1-x}$Mg$_{x}$O film plays a key role for the formation of 2DEG in the device. Our results manifest the sources of 2DEGs in Zn$_{1-x}$Mg$_x$O/ZnO heterostructures on the electronic structure level.