Highly Tunable Ground and Excited State Excitonic Dipoles in Multilayer 2H-MoSe$_2$
Shun Feng, Aidan Campbell, Mauro Brotons-Gisbert, Daniel, Andres-Penares, Hyeonjun Baek, Takashi Taniguchi, Kenji Watanabe, Bernhard, Urbaszek, Iann C. Gerber, and Brian D. Gerardot

TL;DR
This paper demonstrates highly tunable interlayer excitons in multilayer 2H-MoSe$_2$ with large dipoles, energy control, and spin-valley manipulation, advancing the understanding of exciton interactions in van der Waals materials.
Contribution
It reveals electric-field-driven coupling of ground and excited exciton states in multilayer MoSe$_2$, enabling control over dipoles, energy, and spin-valley properties, with strong light-matter interaction implications.
Findings
Large permanent dipoles up to 0.73 enm.
Energy tunability of up to 200 meV.
Manipulation of exciton g-factor from -4 to +14.
Abstract
The fundamental properties of an exciton are determined by the spin, valley, energy, and spatial wavefunctions of the Coulomb bound electron and hole. In van der Waals materials, these attributes can be widely engineered through layer stacking configuration to create highly tunable interlayer excitons with static out-of-plane electric dipoles, at the expense of the strength of the oscillating in-plane dipole responsible for light-matter coupling. Here we show that interlayer excitons in bi- and tri-layer 2H-MoSe crystals exhibit electric-field-driven coupling with the ground () and excited states () of the intralayer A excitons. We demonstrate that the hybrid states of these distinct exciton species provide strong oscillator strength, large permanent dipoles (up to enm), high energy tunability (up to 200 meV), and full control of the spin and valley…
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Taxonomy
Topics2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties
