Work Function Engineered Charge Plasma-Germanium Double Gate Tunnel Field Effect Transistor for Low-Power Switching Applications

TL;DR

This paper introduces a charge plasma-based germanium double gate tunnel FET with work function engineering that achieves high performance, low power consumption, and improved reliability for next-generation switching applications.

Contribution

It proposes a novel CP-Ge-DGTFET structure utilizing work function engineering to enhance electrical performance without additional pocket ion-implantation.

Findings

High ON current and ION/IOFF ratio achieved

Low sub-threshold swing of ~5.23 mV/dec

Enhanced RF and analog performance metrics

Abstract

Here, we propose a Charge Plasma (CP)-based Germanium Double Gate Tunnel Field-Effect Transistor (Ge-DGTFET) device structure, where a CP is induced in the heavily doped source region using the work function engineering of source electrode. The CP enables creation of electrical metallurgical junction and converts n-p-n to p-n-p-n structure of TFET and enhances the drain current, reliability, eliminate additional pocket ion-implantation. The proposed CP-Ge-DGTFET device structure revealed excellent electrical DC performance as compared to the conventional Ge-DGTFET device structure such as high ON current (ION), excellent ION/IOFF ratio, and low sub-threshold swing of ~4.7E-4 A/um, ~1.8E9, and ~5.23 mV/dec, respectively. Furthermore, analog/RF analyses revealed high transconductance, upright cut-off frequency, low overall capacitance, transit time, and power delay product. Therefore, the proposed CP-Ge-DGTFET device structure with alternate channel material Ge, High-\k{appa} Al2O3, and work function engineered CP in source region furnishes high performance and cost-effective solution for next-generation energy-efficient switching applications.