Manipulating Spin-Lattice Coupling in Layered Magnetic Topological Insulator Heterostructure $via$ Interface Engineering
Sujan Maity, Dibyendu Dey, Anudeepa Ghosh, Suvadip Masanta, Binoy, Krishna De, Hemant Singh Kunwar, Bikash Das, Tanima Kundu, Mainak Palit,, Satyabrata Bera, Kapildeb Dolui, Kenji Watanabe, Takashi Taniguchi, Liping, Yu, A Taraphder, and Subhadeep Datta

TL;DR
This study demonstrates spin-phonon coupling at the interface of a layered topological insulator and an antiferromagnetic material, revealing how interface engineering can manipulate magnetic and lattice interactions with potential spintronic applications.
Contribution
It reports the observation of spin-phonon coupling in Bi2Te3/FePS3 heterostructures and explains its origin using the Ginzburg-Landau formalism, highlighting the role of interface strain and material stacking.
Findings
Spin-phonon coupling observed below 60 K in heterostructure.
Reduction of FePS3 Néel temperature from 120 K to 65 K due to interface strain.
Insertion of hexagonal boron nitride restores phonon anharmonicity.
Abstract
Induced magnetic order in a topological insulator (TI) can be realized either by depositing magnetic adatoms on the surface of a TI or engineering the interface with epitaxial thin film or stacked assembly of two-dimensional (2D) van der Waals (vdW) materials. Herein, we report the observation of spin-phonon coupling in the otherwise non-magnetic TI BiTe, due to the proximity of FePS (an antiferromagnet (AFM), 120 K), in a vdW heterostructure framework. Temperature-dependent Raman spectroscopic studies reveal deviation from the usual phonon anharmonicity originated from spin-lattice coupling at the BiTe/FePS interface at/below 60 K in the peak position (self-energy) and linewidth (lifetime) of the characteristic phonon modes of BiTe (106 cm and 138 cm) in the stacked heterostructure.…
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Taxonomy
TopicsTopological Materials and Phenomena · Physics of Superconductivity and Magnetism · Quantum and electron transport phenomena
