Ultrafast Photo-induced Phase Change in SnSe
Benjamin J. Dringoli, Mark Sutton, Zhongzhen Luo, Mercouri G., Kanatzidis, David G. Cooke

TL;DR
This study uses time-resolved THz spectroscopy to reveal an ultrafast, non-thermal phase change in SnSe caused by photoexcitation, leading to charge localization and phase segregation.
Contribution
It demonstrates a new ultrafast, non-thermal phase transition in SnSe driven by optical excitation, characterized by distinct transient THz responses.
Findings
Charge localization indicated by Lorentzian-like spectra
Bimodal rise in photoconductivity due to multiple band excitations
Critical fluence causes a phase segregation and band gap collapse
Abstract
Time-resolved multi-terahertz (THz) spectroscopy is used to observe an ultrafast, non-thermal electronic phase change in SnSe driven by interband photoexcitation with 1.55 eV pump photons. The transient THz photoconductivity spectrum is found to be Lorentzian-like, indicating charge localization and phase segregation. The rise of photoconductivity is bimodal in nature, with both a fast and slow component due to excitation into multiple bands and subsequent intervalley scattering. The THz conductivity magnitude, dynamics, and spectra show a drastic change in character at a critical excitation fluence of approximately 6 mJ/cm^2 due to a photo-induced phase segregation and a macroscopic collapse of the band gap.
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Taxonomy
TopicsChalcogenide Semiconductor Thin Films · Advanced Thermoelectric Materials and Devices · Terahertz technology and applications
