A compact and versatile cryogenic probe station for quantum device testing

TL;DR

This paper introduces a compact cryogenic probe station capable of testing various electronic devices at temperatures below 2K, facilitating rapid quantum device characterization and development.

Contribution

The work presents a versatile, small-sized probe station compatible with standard cryogenic setups, enabling efficient testing of diverse devices from room temperature to below 2K.

Findings

Successful characterization of silicon fin FETs as quantum dot hosts

Compatibility with standard cryogenic setups including magnets

Potential to accelerate quantum device development cycles

Abstract

Fast feedback from cryogenic electrical characterization measurements is key for the development of scalable quantum computing technology. At room temperature, high-throughput device testing is accomplished with a probe-based solution, where electrical probes are repeatedly positioned onto devices for acquiring statistical data. In this work we present a probe station that can be operated from room temperature down to below 2$\,$K. Its small size makes it compatible with standard cryogenic measurement setups with a magnet. A large variety of electronic devices can be tested. Here, we demonstrate the performance of the prober by characterizing silicon fin field-effect transistors as a host for quantum dot spin qubits. Such a tool can massively accelerate the design-fabrication-measurement cycle and provide important feedback for process optimization towards building scalable quantum circuits.