Excitonic Absorption Signatures of Twisted Bilayer WSe$_{2}$ by Electron Energy-Loss Spectroscopy
Steffi Y. Woo, Alberto Zobelli, Robert Schneider, Ashish, Arora, Johann A. Preu{\ss}, Benjamin J. Carey, Steffen Michaelis de, Vasconcellos, Maurizia Palummo, Rudolf Bratschitsch, Luiz H. G., Tizei

TL;DR
This study combines electron energy-loss spectroscopy and first-principles calculations to analyze how twist angle affects excitonic absorption in bilayer WSe2, revealing a significant blueshift and providing insights into interlayer coupling.
Contribution
It presents the first combined experimental and theoretical analysis of excitonic absorption signatures in twisted bilayer WSe2 across various twist angles.
Findings
Blueshift of up to 200 meV in excitonic peak C with increasing twist angle.
Detailed spectral features explained by first-principles dielectric response calculations.
Unfolded DFT calculations show minimal change in valence band, significant uplift of conduction band near Q point.
Abstract
Moir\'{e} twist angle underpins the interlayer interaction of excitons in twisted van der Waals hetero- and homo-structures. The influence of twist angle on the excitonic absorption of twisted bilayer tungsten diselenide (WSe) has been investigated using electron energy-loss spectroscopy. Atomic-resolution imaging by scanning transmission electron microscopy was used to determine key structural parameters, including the nanoscale measurement of the relative twist angle and stacking order. Detailed spectral analysis revealed a pronounced blueshift in the high-energy excitonic peak C with increasing twist angle, up to 200 meV when compared to the AA stacking. The experimental findings have been discussed relative to first-principle calculations of the dielectric response of the AA stacked bilayer WSe as compared to monolayer WSe by employing the…
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Taxonomy
TopicsChalcogenide Semiconductor Thin Films · 2D Materials and Applications · Quantum Dots Synthesis And Properties
