Comphy v3.0 -- A Compact-Physics Framework for Modeling Charge Trapping Related Reliability Phenomena in MOS Devices

TL;DR

Comphy v3.0 is an open source physics-based framework that models charge trapping and related reliability phenomena in MOS devices using nonradiative multiphonon theory, enabling practical analysis and defect characterization.

Contribution

It introduces new features to the Comphy framework for unified modeling of reliability effects, advancing the capabilities for device analysis and physics-based simulation.

Findings

Effective modeling of TAT in high-k capacitors

Automatic extraction of defect distributions

BTI/RTN modeling at cryogenic temperatures

Abstract

Charge trapping plays an important role for the reliability of electronic devices and manifests itself in various phenomena like bias temperature instability (BTI), random telegraph noise (RTN), hysteresis or trap-assisted tunneling (TAT). In this work we present Comphy v3.0, an open source physical framework for modeling these effects in a unified fashion using nonradiative multiphonon theory on a one-dimensional device geometry. Here we give an overview about the underlying theory, discuss newly introduced features compared to the original Comphy framework and also review recent advances in reliability physics enabled by these new features. The usefulness of Comphy v3.0 for the reliability community is highlighted by several practical examples including automatic extraction of defect distributions, modeling of TAT in high-k capacitors and BTI/RTN modeling at cryogenic temperatures.