Changing the properties of Hf$_{0.5}$Zr$_{0.5}$O$_{2}$ during cyclic repolarization of ferroelectric capacitors with different electrode materials
Timur M. Zalyalov, Damir R. Islamov

TL;DR
This study investigates how the ferroelectric properties of Hf$_{0.5}$Zr$_{0.5}$O$_{2}$ change during cyclic polarization in metal-ferroelectric-metal capacitors, focusing on the effects of different electrode materials through experiments and simulations.
Contribution
It provides new insights into the evolution of ferroelectric properties and oxygen vacancy distribution during cycling, considering different electrode materials.
Findings
Ferroelectric properties evolve during cyclic polarization.
Oxygen vacancy distribution changes with cycling.
Electrode material impacts ferroelectric endurance.
Abstract
The interest in the ferroelectric non-volatile memory as a candidate for low power consumption electronic memories was raised after the discovery of ferroelectricity in hafnium oxide. Doping by different elements of hafnia films allows improving their ferroelectric properties. In this work, the transport experiments are combined with the simulations to study the evolution of ferroelectric properties and the mean distance between oxygen vacancies during the endurance of hafnium-zirconium oxide in metal-ferroelectric-metal structures to study the impact of different metal electrodes.
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Taxonomy
TopicsFerroelectric and Negative Capacitance Devices · Semiconductor materials and devices · Advanced Memory and Neural Computing
