Identification of different silicon vacancy centers in 6H-SiC

TL;DR

This paper characterizes and identifies key silicon vacancy centers in 6H-SiC, using photoluminescence and ODMR techniques to resolve previous ambiguities and advance quantum technology applications.

Contribution

It provides detailed identification of three main charged silicon vacancies in 6H-SiC using combined optical and magnetic resonance spectroscopy.

Findings

Identification of three key silicon vacancy centers in 6H-SiC.

Correlation of optical and magnetic spectra to resolve prior controversies.

Detailed spectral characterization at various temperatures and power levels.

Abstract

Silicon vacancies in silicon carbide (SiC) have been proposed as interesting candidates for quantum technology applications such as quantum sensing and quantum repeaters. SiC exists in many polytypes with different plane stacking sequences, and in each polytype, the vacancies can occupy a variety of different lattice sites. In this work, we characterize and identify the three most important charged silicon vacancies in the 6H-SiC polytype. We record the photoluminescence and continuous-wave optically detected magnetic resonance spectra at different radio-frequency power levels and different temperatures. We individually select the zero-phonon lines of the different silicon vacancies at low temperatures and record the corresponding optically detected magnetic resonance (ODMR) spectra. ODMR allows us to correlate optical and magnetic resonance spectra and thereby resolve a controversy from earlier work.