Atomically Thin Metal-Dielectric Heterostructures by Atomic Layer Deposition
Pallabi Paul, Paul Schmitt, Vilborg Vala Sigurjonsdottir, Kevin, Hanemann, Nadja Felde, Sven Schroeder, Felix Otto, Marco Gruenewald, Torsten, Fritz, Vladimir Roddatis, Andreas Tuennermann, Adriana Szeghalmi

TL;DR
This study reports the fabrication and characterization of atomically thin Ir/Al2O3 heterostructures with tunable optical properties, revealing layer-by-layer growth and interface bonding, advancing materials for optoelectronic applications.
Contribution
It introduces a method to create atomically thin Ir/Al2O3 heterostructures with controlled composition and demonstrates their tunable dielectric and metallic properties for optoelectronic use.
Findings
Layer-by-layer growth of Ir confirmed by XRR and HRTEM.
Formation of Ir-O-Al bonds at interfaces at lower Ir concentrations.
Transition from dielectric to metallic behavior at 2-4 nm Ir thickness.
Abstract
Heterostructures increasingly attracted attention over the past several years to enable various optoelectronic and photonic applications. In this work, atomically thin interfaces of Ir/Al2O3 heterostructures compatible with micro-optoelectronic technologies are reported. Their structural and optical properties were determined by spectroscopic and microscopic techniques (XRR, XPS, HRTEM, spectroscopic ellipsometry, and UV/VIS/NIR spectrophotometry). The XRR and HRTEM analyses reveal a layer-by-layer growth mechanism of Ir in atomic scale heterostructures, which is different from the typical island-type growth of metals on dielectrics. Alongside, XPS investigations imply the formation of Ir-O-Al bonding at the interfaces for lower Ir concentrations, in contrast to the nanoparticle core-shell structure formation. Precisely tuning the ratio of the constituents ensures the control of the…
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Taxonomy
TopicsSemiconductor materials and devices · Copper Interconnects and Reliability · Optical Coatings and Gratings
