Measuring the Electronic Bandgap of Carbon Nanotube Networks in Non-ideal p-n Diodes

TL;DR

This paper presents a method to measure the electronic bandgap of carbon nanotube networks using non-ideal p-n diodes, providing experimental validation of theoretical predictions for different nanotube diameters.

Contribution

It introduces a novel approach to determine the bandgap of s-SWCNT networks through non-ideal p-n diodes, addressing challenges in dimensionality.

Findings

Measured bandgaps consistent with theoretical values

Provided insights into excitonic levels of s-SWCNTs

Validated the use of non-ideal p-n diodes for bandgap measurement

Abstract

The measurement of the bandgap in quasi-one dimensional materials such as carbon nanotubes is challenging due to its dimensionality. In this work, we measure the electronic bandgap of networks of polymer-wrapped semiconducting single-walled carbon nanotubes (s-SWCNTs) using non-ideal p-n diodes. Using these diodes, we measure the electronic bandgap and excitonic levels of different polymer-wrapped s-SWCNTs with varying diameters: arc discharge (~1.55nm), (7,5) (0.83nm), and (6,5) (0.76nm). Our values are consistent with theoretical predictions, providing insight into the fundamental properties of networks of s-SWCNTs.