Macroscopic quantum effects of electromagnetic induction in silicon nanostructures
L.E. Klyachkin, N.T. Bagraev, A.M. Malyarenko

TL;DR
This paper demonstrates a macroscopic quantum galvanomagnetic effect in heavily boron-doped silicon nanostructures at room temperature, where magnetic flux quanta induce a current without external voltage, revealing quantum phenomena in macroscopic systems.
Contribution
It introduces a novel macroscopic quantum effect in silicon nanostructures, showing magnetic flux quanta can induce currents without external voltage at room temperature.
Findings
Observation of a quantum galvanomagnetic effect at room temperature
Induction current generated solely by a magnetic field
Quantum effects manifest in silicon nanostructures with negative-U centers
Abstract
At room temperature, a macroscopic quantum galvanomagnetic effect of Faraday electromagnetic induction was demonstrated under conditions of the capture of single magnetic flux quanta in the edge channels, confined by chains of negative-U centers, in a silicon nanostructure heavily doped with boron, prepared in Hall geometry on an n-type Si (100) substrate. It is shown that this effect leads to the appearance of an induction current when only a constant magnetic field is applied in the absence of an externally applied voltage or a stabilized current.
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Taxonomy
TopicsElectromagnetic Effects on Materials · Semiconductor materials and interfaces · Surface and Thin Film Phenomena
