Influence of Defects on the Valley Polarization Properties of Monolayer MoS$_{2}$ Grown by Chemical Vapor Deposition
Faiha Mujeeb, Poulab Chakrabarti, Vikram Mahamiya, Alok Shukla,, Subhabrata Dhar

TL;DR
This study investigates how sulfur-vacancies and air-molecule defects influence valley depolarization in monolayer MoS$_{2}$ grown by CVD, revealing defect-induced momentum scattering as a key factor.
Contribution
It provides a detailed analysis of defect-related mechanisms affecting valley polarization, combining experimental spectroscopy with density functional theory calculations.
Findings
Momentum scattering rate scales with the cube root of defect density.
Sulfur-vacancies and air molecules significantly enhance intervalley spin-flip scattering.
Strain and defect density influence the energy separation between valleys.
Abstract
Here, the underlying mechanisms behind valley de-polarization is investigated in chemical vapor deposited 1L-MoS. Temperature dependent polarization resolved photoluminescence spectroscopy was carried out on as-grown, transferred and capped samples. It has been found that the momentum scattering of the excitons due to the sulfur-vacancies attached with air-molecule defects has a strong influence on the valley de-polarization process. Our study reveals that at sufficiently low densities of such defects and temperatures, long range electron-hole exchange mediated intervalley transfer due to momentum scattering via Maialle-Silva-Sham (MSS) mechanism of excitons is indeed the most dominant spin-flip process as suggested by T. Yu et al. The rate of momentum scattering of the excitons due to these defects is found to be proportional to the cube root of the density of the defects.…
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Taxonomy
Topics2D Materials and Applications · Molecular Junctions and Nanostructures · MXene and MAX Phase Materials
