Doped Semiconductor Devices for sub-MeV Dark Matter Detection

TL;DR

This paper proposes doped semiconductor detectors capable of detecting sub-MeV dark matter interactions through low-energy ionization, outlining design considerations and potential sensitivity improvements.

Contribution

It introduces a novel application of doped semiconductors for low-threshold dark matter detection, including detector design and technological requirements.

Findings

Potential to test currently unconstrained dark matter cross sections

Detection thresholds around 10 meV energy depositions

Feasibility of 1 g-day exposure with existing background levels

Abstract

Dopant atoms in semiconductors can be ionized with $\sim10$ meV energy depositions, allowing for the design of low-threshold detectors. We propose using doped semiconductor targets to search for sub-MeV dark matter scattering or sub-eV dark matter absorption on electrons. Currently unconstrained cross sections could be tested with a 1 g-day exposure in a doped detector with backgrounds at the level of existing pure semiconductor detectors, but improvements would be needed to probe the freeze-in target. We discuss the corresponding technological requirements and lay out a possible detector design.