Rubidium Focused Ion Beam Induced Platinum Deposition

TL;DR

This study compares rubidium and gallium focused ion beam induced platinum deposition, revealing similar deposition rates but differences in composition and resistivity, with potential implications for material properties.

Contribution

It is the first detailed characterization of Rb$^+$ FIBID of platinum, highlighting differences from Ga$^+$ FIBID in composition and electrical resistivity.

Findings

Rb$^+$ FIBID-Pt has similar deposition rates to Ga$^+$ FIBID-Pt.

Rb$^+$ FIBID-Pt contains less primary ion contamination.

Resistivity of Rb$^+$ FIBID-Pt is higher than that of Ga$^+$ FIBID-Pt.

Abstract

This work presents characterization of focused ion beam induced deposition (FIBID) of platinum using both rubidium and gallium ions. Under similar beam energies, 8.5 keV for Rb$^+$ and 8.0 keV for Ga$^+$, and beam current near 10 pA, the two ion species deposited Pt films at similar rates. Energy-dispersive x-ray spectroscopy shows that the Rb$^+$ FIBID-Pt consists of similar Pt contents with much lower primary ion contents (5% Rb and 27% Ga) than the Ga$^+$ FIBID-Pt. The deposited material was also measured to have a resistivity of $8.1\times 10^4$ $\mathrm{\mu\Omega\cdot cm}$ for the Rb$^+$ FIBID-Pt and $5.7\times 10^3$ $\mathrm{\mu\Omega\cdot cm}$ for the Ga$^+$ FIBID-Pt.