Electronic properties of Janus black arsenic-phosphorus (b-AsP) nanoribbons under transverse electric field

TL;DR

This study investigates the electronic transport properties of Janus black arsenic-phosphorus nanoribbons, revealing their tunable bandgap under transverse electric fields and potential for electronic transmission applications.

Contribution

It provides a systematic analysis of edge structure effects and demonstrates electric field-induced phase transitions in Janus b-AsP nanoribbons.

Findings

Edge bands are flatter in (1,3)nb and (3,1)nb nanoribbons.

Armchair nanoribbons show double degeneracy in edge bands.

Transverse electric fields can fully close the bandgap, inducing a semiconductor-to-conductor transition.

Abstract

The electronic transport properties of Janus monolayer black arsenic phosphorus (b-AsP) nanoribbons have been investigated utilizing the tight-binding approach. The dependence of electronic structure on edge structures is systematically investigated. (1,3)nb and (3,1)nb b-AsP nanoribbons exhibit flatter edge bands than zigzag and armchair counterparts. The edge band of the armchair ones show double degeneracy. Further, the calculated results show the band gap of the zigzag ribbon with different boundary morphology is widely tunable by transverse electric field. A critical electric field can fully close the gap and induce a phase transition from a semiconductor into a conductor. Our work suggests dynamically tunable bandgap in Janus b-AsP nanoribbons and reveals the potential of Janus b-AsP for transmission devices.