Device Modeling Bias in ReRAM-based Neural Network Simulations
Osama Yousuf, Imtiaz Hossen, Matthew W. Daniels, Martin Lueker-Boden,, Andrew Dienstfrey, Gina C. Adam

TL;DR
This paper investigates how data-driven ReRAM device models, especially jump tables, influence neural network simulation accuracy, revealing biases and proposing metrics to assess model fidelity at the device and network levels.
Contribution
It analyzes the impact of jump table modeling bias on neural network performance estimates and introduces device-level metrics to evaluate model fidelity.
Findings
Binning models can unpredictably over- or under-estimate accuracy at low data points.
Device models based on optimized binning show trends consistent with network-level bias.
Proposed metrics can indicate potential modeling biases at the device level.
Abstract
Data-driven modeling approaches such as jump tables are promising techniques to model populations of resistive random-access memory (ReRAM) or other emerging memory devices for hardware neural network simulations. As these tables rely on data interpolation, this work explores the open questions about their fidelity in relation to the stochastic device behavior they model. We study how various jump table device models impact the attained network performance estimates, a concept we define as modeling bias. Two methods of jump table device modeling, binning and Optuna-optimized binning, are explored using synthetic data with known distributions for benchmarking purposes, as well as experimental data obtained from TiOx ReRAM devices. Results on a multi-layer perceptron trained on MNIST show that device models based on binning can behave unpredictably particularly at low number of points in…
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Taxonomy
TopicsAdvanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Machine Learning and ELM
