Improvement of both performance and stability of photovoltaic devices by in situ formation of a sulfur-based 2D perovskite

TL;DR

This paper demonstrates that in situ formation of a sulfur-based 2D perovskite layer enhances both the efficiency and stability of photovoltaic devices by surface passivation and hydrophobic surface formation.

Contribution

The study introduces a sulfur-rich spacer cation TEAI for constructing 3D/2D perovskite bilayers, significantly improving performance and stability of PSCs.

Findings

Achieved 20.06% efficiency with TEAI-treated PSCs.

Enhanced humidity and thermal stability of perovskite devices.

Surface passivation reduces non-radiative recombination.

Abstract

Perovskite solar cells (PSCs) with superior performance have been recognized as a potential candidate in photovoltaic technologies. However, the defects in active perovskite layer induce non-radiative recombination which restricts the performance and stability of the PSCs. The construction of thiophene-based 2D structure is one of the significant approaches for surface passivation of hybrid PSCs that may combine the benefits of the stability of 2D perovskite with the high performance of 3D perovskite. Here, a sulfur-rich spacer cation 2-thiopheneethylamine iodide (TEAI) is synthesized as a passivation agent for the construction of three-dimensional/two-dimensional (3D/2D) perovskite bilayer structure. TEAI-treated PSCs possess a much higher efficiency (20.06%) compared to the 3D perovskite (MAFAPbI3) devices (17.42%). Time-resolved photoluminescence (TRPL) and femtosecond transient absorption (TA) spectroscopy are employed to investigate the effect of surface passivation on the charge carrier dynamics of the 3D perovskite. Additionally, the stability test of TEAI-treated perovskite devices reveals significant improvement in humid (RH ~ 56%) and thermal stability as the sulfur-based 2D (TEA)2PbI4 material self-assembles on the 3D surface making the perovskite surface hydrophobic. Our findings provide a reliable approach to improve device stability and performance successively, paving the way for industrialization of PSCs.