Synthesis of functional nitride membranes using sacrificial water-soluble BaO layers
Shengru Chen, Qiao Jin, Shan Lin, Haitao Hong, Ting Cui, Dongke Rong,, Guozhu Song, Shanmin Wang, Kuijuan Jin, Qiang Zheng, and Er-Jia Guo

TL;DR
This paper introduces a novel water-soluble BaO sacrificial layer method for fabricating high-quality, freestanding transition metal nitride membranes, enabling new possibilities for heterostructure integration and device applications.
Contribution
It demonstrates the use of BaO as a universal sacrificial layer for creating crystalline TMN membranes, overcoming lattice mismatch challenges.
Findings
Successful fabrication of millimeter-sized CrN membranes
Direct atomic structure observation of membranes
Correlation of electronic states with transport properties
Abstract
Transition metal nitrides (TMNs) exhibit fascinating physical properties that hold great potential in future device applications. To stack two-dimensional TMNs with other functional materials that have dissimilar orientations and symmetries requires to separate epitaxial TMNs from the growth substrates. However, the lattice constants of TMNs are not compatible with those of most sacrificial layers, leading to a great challenge to fabricate high-quality single crystalline TMN membranes. In this letter, we report the application of a water-soluble BaO sacrificial layer as a general approach to create freestanding TMN membranes. Taken CrN as an example, the relatively small lattice mismatch and identical cubic structure between BaO and CrN ensure the growth of heterostructures. Millimeter-size CrN membrane allows us to directly observe the planar-view of atomic structure and to correlate…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsMXene and MAX Phase Materials · Semiconductor materials and devices · Metal and Thin Film Mechanics
