A quantum dot-based frequency multiplier

TL;DR

This paper introduces a quantum dot-based RF frequency multiplier operating at cryogenic temperatures, demonstrating high harmonic conversion efficiency suitable for integration in silicon quantum computing systems.

Contribution

It presents a novel quantum dot-based frequency multiplier device using silicon nanowire transistors, achieving near-ideal performance up to a multiplication factor of 10.

Findings

Near-ideal harmonic voltage conversion up to x10

Operates effectively at cryogenic temperatures

Compatible with silicon-based quantum systems

Abstract

Silicon offers the enticing opportunity to integrate hybrid quantum-classical computing systems on a single platform. For qubit control and readout, high-frequency signals are required. Therefore, devices that can facilitate its generation are needed. Here, we present a quantum dot-based radiofrequency multiplier operated at cryogenic temperatures. The device is based on the non-linear capacitance-voltage characteristics of quantum dot systems arising from their low-dimensional density of states. We implement the multiplier in a multi-gate silicon nanowire transistor using two complementary device configurations: a single quantum dot coupled to a charge reservoir and a coupled double quantum dot. We study the harmonic voltage conversion as a function of energy detuning, multiplication factor and harmonic phase noise and find near ideal performance up to a multiplication factor of 10. Our results demonstrate a method for high-frequency conversion that could be readily integrated into silicon-based quantum computing systems and be applied to other semiconductors.