Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials

TL;DR

This study explores valley-polarized quantum anomalous Hall effects in van der Waals heterostructures based on monolayer jacutingaite family materials, revealing potential for topological valleytronics applications.

Contribution

It systematically investigates the atomic, electronic, and topological properties of specific vdW heterostructures, identifying four that exhibit valley-polarized quantum anomalous Hall phases with significant valley splitting and band gaps.

Findings

Four heterostructures exhibit valley-polarized quantum anomalous Hall phases.

Maximum valley splitting of 134.2 meV observed.

Global band gap of 58.8 meV in one heterostructure.

Abstract

We numerically study the general valley polarization and anomalous Hall effect in van der Waals (vdW) heterostructures based on monolayer jacutingaite family materials Pt$_{2}$AX$_{3}$ (A = Hg, Cd, Zn; X = S, Se, Te). We perform a systematic study on the atomic, electronic, and topological properties of vdW heterostructures composed of monolayer Pt$_{2}$AX$_{3}$ and two-dimensional ferromagnetic insulators. We show that four kinds of vdW heterostructures exhibit valley-polarized quantum anomalous Hall phase, i.e., Pt$_{2}$HgS$_{3}$/NiBr$_{2}$, Pt$_{2}$HgSe$_{3}$/CoBr$_{2}$, Pt$_{2}$HgSe$_{3}$/NiBr$_{2}$, and Pt$_{2}$ZnS$_{3}$/CoBr$_{2}$, with a maximum valley splitting of 134.2 meV in Pt$_{2}$HgSe$_{3}$/NiBr$_{2}$ and sizable global band gap of 58.8 meV in Pt$_{2}$HgS$_{3}$/NiBr$_{2}$. Our findings demonstrate an ideal platform to implement applications on topological valleytronics.