3D Interconnected Magnetic Nanowire Networks as Potential Integrated Multistate Memristors

TL;DR

This study demonstrates that interconnected magnetic nanowire networks can exhibit discrete magnetic state propagation and multistate memristor behavior, with control over domain wall pinning through magnetic field and current, promising for 3D data storage and neuromorphic computing.

Contribution

It introduces the use of interconnected Co nanowire networks for multistate memristors, showing domain wall pinning effects and controllability via current and magnetic field.

Findings

Discrete magnetic state propagation observed in nanowire networks.

Domain wall pinning at intersections causes unique magnetoresistance features.

Sequential switching and stochastic behavior in complex networks.

Abstract

Interconnected magnetic nanowire (NW) networks offer a promising platform for 3-dimensional (3D) information storage and integrated neuromorphic computing. Here we report discrete propagation of magnetic states in interconnected Co nanowire networks driven by magnetic field and current, manifested in distinct magnetoresistance (MR) features. In these networks, when only a few interconnected NWs were measured, multiple MR kinks and local minima were observed, including a significant minimum at a positive field during the descending field sweep. Micromagnetic simulations showed that this unusual feature was due to domain wall (DW) pinning at the NW intersections, which was confirmed by off-axis electron holography imaging. In a complex network with many intersections, sequential switching of nanowire sections separated by interconnects was observed, along with stochastic characteristics. The pinning/depinning of the DWs can be further controlled by the driving current density. These results illustrate the promise of such interconnected networks as integrated multistate memristors.