Simulating Charged Defects in Silicon Dangling Bond Logic Systems to Evaluate Logic Robustness
Samuel S. H. Ng, Jeremiah Croshaw, Marcel Walter, Robert Wille, Robert, Wolkow, Konrad Walus

TL;DR
This paper introduces a fixed-charge defect simulation method for silicon dangling bond logic systems, enhancing existing models to evaluate robustness of quantum-dot-based logic circuits at the nanoscale.
Contribution
It formulates and implements a fixed-charge defect simulation into SiQAD, enabling accurate analysis of defect effects on silicon dangling bond logic circuits.
Findings
High accuracy in defect simulation validated against experiments.
Determined minimum clearance for logic gate robustness.
Provides a foundation for future logic robustness studies.
Abstract
Recent research interest in emerging logic systems based on quantum dots has been sparked by the experimental demonstration of nanometer-scale logic devices composed of atomically sized quantum dots made of silicon dangling bonds (SiDBs), along with the availability of SiQAD, a computer-aided design tool designed for this technology. Latest design automation frameworks have enabled the synthesis of SiDB circuits that reach the size of -- orders of magnitude more complex than their hand-designed counterparts. However, current SiDB simulation engines do not take defects into account, which is important to consider for these sizable systems. This work proposes a formulation for incorporating fixed-charge simulation into established ground state models to cover an important class of defects that has a non-negligible effect on nearby SiDBs at the …
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Taxonomy
TopicsSemiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Integrated Circuits and Semiconductor Failure Analysis
