Cascadable in-memory computing based on symmetric writing and read out

TL;DR

This paper introduces a symmetric in-memory computing mechanism using PASO quantum materials, enabling scalable, energy-efficient, and ultrafast spintronic logic operations with direct cascadability.

Contribution

It proposes a novel symmetric write/read mechanism in PASO quantum materials, overcoming asymmetry challenges in p-MTJ devices for in-memory computing.

Findings

Demonstrated field-free, deterministic magnetization reversal in PASO materials.

Implemented complete logic-in-memory operations including a half-adder.

Showed potential for scalable, energy-efficient spintronic computing.

Abstract

The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting asymmetric write and read-out operations impose challenges in downscaling and direct cascadability of p-MTJ devices. Here, we propose that a new symmetric write and read-out mechanism can be realized in perpendicular-anisotropy spin-orbit (PASO) quantum materials based on Fe3GeTe2 and WTe2. We demonstrate that field-free and deterministic reversal of the perpendicular magnetization can be achieved by employing unconventional charge to z-spin conversion. The resulting magnetic state can be readily probed with its intrinsic inverse process, i.e., z-spin to charge conversion. Using the PASO quantum material as a fundamental building block, we implement the functionally complete set of logic-in-memory operations and a more complex nonvolatile half-adder logic function. Our work highlights the potential of PASO quantum materials for the development of scalable energy-efficient and ultrafast spintronic computing.