3D two-electron double quantum dot: comparison between the behavior of some physical quantities under two different confinement potentials in the presence of a magnetic field
A. M. Maniero, F. V. Prudente, C. R. de Carvalho, Ginette Jalbert

TL;DR
This paper investigates how different confinement potentials affect the physical properties of a two-electron double quantum dot system under a magnetic field, with implications for quantum gate operations.
Contribution
It compares the behavior of key physical quantities in two confinement profiles, highlighting their sensitivity to potential shape in quantum computing applications.
Findings
Physical quantities vary significantly with confinement potential.
Sensitivity to potential profile depends on magnetic field range.
Results inform optimal quantum dot design for quantum gates.
Abstract
We have considered a system consisting of two coupled quantum dots containing two electrons, i.e., two quantum dots next to each other with one excess electron each, subjected to an uniform magnetic field perpendicular to the quantum dots plane. The effect of different confinement potential profiles under which the electrons are subjected is studied. This study has been performed in the light of interest in fundamental logical quantum-gate operations: we have been concerned in analysing the behaviour of the main physical quantities which should be involved in a two-qubit quantum-gate operation for two different profiles of confinement found in literature. Our purpose was to establish how sensitive the physical quantities are to the confinement profile and in which range of magnetic field this issue can be critical.
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Taxonomy
TopicsQuantum and electron transport phenomena · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design
